Garrett Hayes (PhD, MSE), Xiaoqing Xu (Stanford Nanofabrication Facility) and Prof. Bruce Clemens (MSE)
Gallop Semiconductor is developing a technology that enables GaN substrate reuse – a process that will allow device manufacturers to substantially cut costs, and enable wider adoption of more energy-efficient products. Gallium Nitride (GaN) is a semiconductor material used in a variety of energy-related devices, such as light-emitting diodes (LEDs) and high-efficiency power converters. The global GaN device market is roughly $17 billion, however GaN’s continued market penetration is hindered in large part due to the high cost of bulk GaN wafers – a 2” GaN wafer costs about $1000 or more, making it prohibitively expensive for use in many applications. (As a point of comparison, a 2” Silicon wafer costs less than $1) Gallop’s technology will unlock GaN’s potential as a semiconductor material.